Light emitting diode and light emitting device

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises a semiconductor laminated layer, a first electrode and a second electrode, the semiconductor laminated layer is provided with a table top, a lower surface and an upper surface which are opposite, and the semiconductor laminated layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer. The light-emitting layer is located between the first semiconductor layer and the second semiconductor layer, the mesa refers to the surface, not covered by the light-emitting layer, of the first semiconductor layer, the first semiconductor layer is provided with a through part at the mesa, and the through part penetrates from the upper surface of the first semiconductor layer to the lower surface of the first semiconductor layer; the first electrode is provided at least in the through portion to electrically connect the first semiconductor layer, and the