CMOS image sensor pixel assembly and manufacturing method thereof

The invention relates to the field of image sensors, in particular to a CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel component and a manufacturing method thereof, which are characterized in that a transmission gate oxide is deposited on a first grid region between a pixel region on a CMOS precursor and a P-type well isolation region, and a transmission gate is deposited on the surface of the transmission gate oxide; depositing isolated gate oxide on the second grid region and the surface of the transmission gate, and depositing an isolated gate on the surface of the isolated gate oxide; the second grid region is located between the first grid region and the pixel region; arranging isolation side walls around the polycrystalline gate group to obtain a CMOS prefabricated object; the polycrystal gate group comprises the transmission gate and the isolation gate; and sequentially arranging a photodiode Pin injection region, a floating diffusion node, a surface passivation layer and interconnec