Integrated circuit and manufacturing method thereof

The invention provides an integrated circuit and a manufacturing method thereof. The integrated circuit includes a first conductor section intersecting a first active region structure at a source/drain region and a second conductor section intersecting a second active region structure at a source/dr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHEN ZHILIANG, LAI ZHIYOU, LU QIYOU, QIU SHANGXUAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention provides an integrated circuit and a manufacturing method thereof. The integrated circuit includes a first conductor section intersecting a first active region structure at a source/drain region and a second conductor section intersecting a second active region structure at a source/drain region. The first conductor section and the second conductor section are separated at a proximal edge by a first separation distance. The first conductor has a distal edge separate from a first power rail, and the second conductor section is connected to a second power rail via a via connection. A distance from the first power rail to a proximal edge of the first conductor section is greater than a distance from the second power rail to a proximal edge of the second conductor section by a predetermined distance, the predetermined distance being a portion of the separation distance. 一种集成电路及其制造方法,集成电路包括在一源极/漏极区处与一第一作用区结构相交的一第一导体区段及在一源极/漏极区处与一第二作用区结构相交的一第二导体区段。该第一导体区段及该第二导体区段在近侧边缘处以一第一分离距离分开。该第一导体具有与一第一电力轨分开的一远侧边缘