SEMICONDUCTOR MEMORY DEVICE

The embodiment provides a semiconductor memory device with good characteristics. According to one embodiment, a semiconductor memory device includes: a plurality of conductive layers arranged in a first direction; a semiconductor layer extending in the first direction and facing the plurality of conductive layers; a charge storage layer provided between the plurality of conductive layers and the semiconductor layer; a first structure disposed apart from the semiconductor layer in a second direction intersecting the first direction, extending in a third direction intersecting the first direction and the second direction, and facing the plurality of conductive layers; and a plurality of first nitride films that cover the surfaces of the plurality of conductive layers facing the first structure and contain nitrogen (N). 实施方式提供一种特性良好的半导体存储装置。实施方式的半导体存储装置具备：多个导电层，沿第1方向排列；半导体层，沿第1方向延伸，且与多个导电层对向；电荷蓄积层，设置在多个导电层与半导体层之间；第1构造，在与第1方向交叉的第2方向上与半导体层相隔配置，沿与第1方向及第2方向交叉的第3方向延伸，且与多个导电层对向；以及多个第1氮化膜，覆盖多个导电层的与第1构造的对向面，且包含氮(N)。