Thin film mask

The invention provides a thin film mask. The thin film mask comprises a first layer and a second layer, the first layer and the second layer are laminated; the second layer comprises an adhesive film; the first layer is irradiated by an ultraviolet light source, the absorption coefficient of the fir...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	CAI YONG'AN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention provides a thin film mask. The thin film mask comprises a first layer and a second layer, the first layer and the second layer are laminated; the second layer comprises an adhesive film; the first layer is irradiated by an ultraviolet light source, the absorption coefficient of the first layer with the thickness below 200 microns is larger than or equal to 20%, and the wavelength of the ultraviolet light source is 355 +/-15 nm; or, the absorption coefficient of the first layer is larger than or equal to 20% when the first layer is irradiated by a green light source and the thickness is smaller than 200 microns, and the wavelength of the green light source is 530 +/-15 nm; or the first layer is irradiated by an infrared light source, the absorption coefficient of the first layer with the thickness smaller than 200 microns is larger than or equal to 20%, and the wavelength of the infrared light source is 1045 +/-20 nm; the visible light transmittance of the first layer is less than or equal to 90%