Silicon carbide crystal growth device and control method

The invention discloses a silicon carbide crystal growth device and a control method. The silicon carbide crystal growth device comprises a crucible body; a crucible cover; a connection mechanism; the flow guide assembly is arranged in the flow guide channel, the flow guide assembly comprises a firs...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHOU LAIPING, LI WEIYUE, CHEN JUNHONG, LI ZHAOYING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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