Silicon carbide crystal growth device and control method
The invention discloses a silicon carbide crystal growth device and a control method. The silicon carbide crystal growth device comprises a crucible body; a crucible cover; a connection mechanism; the flow guide assembly is arranged in the flow guide channel, the flow guide assembly comprises a firs...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a silicon carbide crystal growth device and a control method. The silicon carbide crystal growth device comprises a crucible body; a crucible cover; a connection mechanism; the flow guide assembly is arranged in the flow guide channel, the flow guide assembly comprises a first rotating shaft and a plurality of blade sets, the central axis of the first rotating shaft extends in the vertical direction, the blade sets are evenly distributed in the circumferential direction of the first rotating shaft at intervals, and each blade set comprises a plurality of flow guide blades; the multiple guide vanes of each vane set are arranged in the vertical direction, every two adjacent guide vanes of each vane set can relatively rotate around the corresponding first rotating shaft, the crucible cover can vertically move relative to the connecting mechanism, and the crucible cover is in transmission connection with the corresponding first rotating shaft so as to drive the corresponding vane set to be |
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