Semiconductor element graphene barrier film deposition method

The present invention relates to a method for manufacturing a graphene barrier film for a semiconductor element, and more particularly, to a method for forming a barrier film including a graphene layer to reduce contact resistance of a metal wiring. The method for preparing the graphene barrier film according to an embodiment of the present invention comprises the steps of: placing a substrate on which a titanium-containing thin film layer is formed in a substrate processing system chamber in which a processing space is formed; a step of supplying a first reaction gas into the chamber and guiding the formation of a crystal nucleus on the titanium-containing thin film layer; and a step of supplying a second reaction gas into the chamber and forming a graphene layer on the titanium-containing thin film layer. 本发明涉及一种半导体元件用石墨烯阻挡薄膜的方法，具体而言，涉及一种形成包括石墨烯层的阻挡薄膜从而减小金属布线接触电阻的方法。基于本发明实施例的石墨烯阻挡薄膜的方法，包括：向形成处理空间的基板处理系统腔室内，将形成含有钛薄膜层的基板安置的步骤；将包含第一反应气体供应至上述腔室内，引导在含有上述钛薄膜层上晶核形成的步骤；以及将包含第二反应气体供应至上述腔室内，并在含有上述钛薄膜层上形成石墨烯层的步骤。