Method for forming semiconductor element and semiconductor element

The invention provides a method for forming a semiconductor element. The method comprises the following steps: providing a substrate; forming an interlayer dielectric layer on the substrate, wherein a first gate trench is formed in the interlayer dielectric layer; a first work function layer is formed in the first gate trench, after the work function layer is formed, a first polycrystalline silicon layer continues to be formed, and a metal silicide layer is formed on the side, close to the first work function layer, of the first polycrystalline silicon layer. The metal silicide layer can protect the first work function layer, so that the first work function layer is prevented from being affected by metal ion diffusion or a photoetching process, deviation of a work function value is avoided, it is ensured that the finally formed semiconductor element has the expected work function value, and the electrical property and the yield of the semiconductor element are better controlled. 本发明提出一种半导体元件的形成方法，包括：提供一衬底；在衬底