Heterojunction and preparation method and application thereof

The invention provides a heterojunction and a preparation method and application thereof, a route combining a chemical vapor deposition method and a dry transfer method is adopted, firstly, a MoS2/WS2 mixed layer is directly obtained through two-step growth by the chemical vapor deposition method, a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WEI QIANGMIN, HUANG JUN, YANG BING, LIU YANGBOWEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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