Heterojunction and preparation method and application thereof

The invention provides a heterojunction and a preparation method and application thereof, a route combining a chemical vapor deposition method and a dry transfer method is adopted, firstly, a MoS2/WS2 mixed layer is directly obtained through two-step growth by the chemical vapor deposition method, and then the MoS2/WS2 mixed layer is transferred to the surface of an h-BN substrate to form the heterojunction by the dry transfer technology. Or the MoS2 layer and the WS2 layer are respectively grown by adopting chemical vapor deposition, and then the MoS2 layer and the WS2 layer are transferred to the surface of the h-BN substrate in batches by utilizing a dry transfer technology to form the heterojunction, the obtained MoS2/WS2-h-BN heterojunction has excellent thermoelectric performance, the control requirement of the method on the chemical vapor deposition method is not very strict, the influence of the external environment is relatively small, and the method is suitable for industrial production. The method