Heterojunction and preparation method and application thereof
The invention provides a heterojunction and a preparation method and application thereof, a route combining a chemical vapor deposition method and a dry transfer method is adopted, firstly, a MoS2/WS2 mixed layer is directly obtained through two-step growth by the chemical vapor deposition method, a...
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| creator | WEI QIANGMIN HUANG JUN YANG BING LIU YANGBOWEN |
| description | The invention provides a heterojunction and a preparation method and application thereof, a route combining a chemical vapor deposition method and a dry transfer method is adopted, firstly, a MoS2/WS2 mixed layer is directly obtained through two-step growth by the chemical vapor deposition method, and then the MoS2/WS2 mixed layer is transferred to the surface of an h-BN substrate to form the heterojunction by the dry transfer technology. Or the MoS2 layer and the WS2 layer are respectively grown by adopting chemical vapor deposition, and then the MoS2 layer and the WS2 layer are transferred to the surface of the h-BN substrate in batches by utilizing a dry transfer technology to form the heterojunction, the obtained MoS2/WS2-h-BN heterojunction has excellent thermoelectric performance, the control requirement of the method on the chemical vapor deposition method is not very strict, the influence of the external environment is relatively small, and the method is suitable for industrial production. The method |
| format | Patent |
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Or the MoS2 layer and the WS2 layer are respectively grown by adopting chemical vapor deposition, and then the MoS2 layer and the WS2 layer are transferred to the surface of the h-BN substrate in batches by utilizing a dry transfer technology to form the heterojunction, the obtained MoS2/WS2-h-BN heterojunction has excellent thermoelectric performance, the control requirement of the method on the chemical vapor deposition method is not very strict, the influence of the external environment is relatively small, and the method is suitable for industrial production. The method</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Heterojunction and preparation method and application thereof |
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