THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SAME
Disclosed are a thin film transistor, a method of manufacturing the same, and a display device including the same, in which the thin film transistor includes: a light shielding layer; an active layer on the light shielding layer; a gate spaced apart from the active layer and overlapping at least a p...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | Disclosed are a thin film transistor, a method of manufacturing the same, and a display device including the same, in which the thin film transistor includes: a light shielding layer; an active layer on the light shielding layer; a gate spaced apart from the active layer and overlapping at least a portion of the active layer; and an inorganic insulating layer between the active layer and the light shielding layer, in which the active layer includes a carrier acceptor.
公开了一种薄膜晶体管、该薄膜晶体管制造方法以及包括该薄膜晶体管的显示装置,其中,所述薄膜晶体管包括:遮光层;遮光层上的有源层;与有源层间隔开并且与有源层的至少一部分重叠的栅极;以及在有源层与遮光层之间的无机绝缘层,其中,有源层包括载流子受体。 |
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