Three-dimensional memory device and ternary content addressable memory cell thereof

The invention provides a three-dimensional memory device and a ternary content addressable memory cell thereof. The ternary content addressable storage unit comprises a first storage unit, a second storage unit, a first search switch and a second search switch. The first memory cell is disposed in the first AND flash memory cell row. The second memory cell is disposed in the second AND flash memory cell row. The first search switch is coupled between a first bit line and a match line corresponding to the first AND flash memory cell row, and the first search switch is controlled by a first search signal to be turned on or turned off. The second search switch is coupled between a second bit line and a match line corresponding to the second AND flash memory cell row, and the second search switch is controlled by a second search signal to be turned on or turned off. 本公开提供了一种三维存储器装置及其三元内容可寻址存储单元。三元内容可寻址存储单元包括第一存储单元、第二存储单元、第一搜索开关以及第二搜索开关。第一存储单元设置在第一与式快闪存储单元行中。第二存储单元设置在第二与式快闪存储单元行中。第一搜索开关耦接在第一与式快闪存储单元行对应的第一位线以及匹配线间，