Film curing method

The invention provides a thin film curing method which comprises the following steps: introducing an oxygen source into a cavity to replace a silicon-nitrogen bond in a silicon-nitrogen polymer thin film; introducing water vapor into a remote plasma source; the remote plasma source dissociates water vapor into hydroxyl radicals and oxygen radicals; the dissociated hydroxyl free radicals and oxygen free radicals are introduced into the cavity; the hydroxyl free radicals and the oxygen free radicals assist the oxygen source in curing the silicon-nitrogen polymer film. 本发明提供了一种薄膜固化方法，所述方法包括：向腔体内通入氧源，用以对硅氮聚合物薄膜中的硅氮键进行替换；将水蒸气通入远程等离子源；所述远程等离子源将水蒸气解离为羟基自由基和氧自由基；将解离出的羟基自由基和氧自由基通入所述腔体；所述羟基自由基与氧自由基协助所述氧源对硅氮聚合物薄膜进行固化。