Miniature light-emitting diode, preparation method thereof and light-emitting device

The invention discloses a miniature light-emitting diode, a preparation method thereof and a light-emitting device, the miniature light-emitting diode comprises a semiconductor stacking layer composed of a first semiconductor layer, an active layer and a second semiconductor layer, and the surface of one side, far away from the active layer, of the second semiconductor layer is provided with a window layer; the window layer comprises an aluminum gallium arsenide layer and a passivation layer which is oxidized inwards by a preset thickness from the outer surface of the side wall of the aluminum gallium arsenide layer. According to the invention, the side wall of the window layer is oxidized into the passivation layer, and the passivation layer can guarantee that the injected current does not flow through the side walls of the window layer and the semiconductor stacking layer, thereby avoiding the non-radiative recombination phenomenon caused by the defects of the side walls of the window layer and the semicond