Monocrystalline silicon neutron irradiation method

The embodiment of the invention provides a monocrystalline silicon neutron irradiation method, which comprises the following steps of: putting monocrystalline silicon to be irradiated which meets a preset length into an irradiation pore channel of a reactor, and enabling the axial direction of the monocrystalline silicon to be irradiated to be the same as the neutron irradiation direction in the irradiation pore channel; a first surface, perpendicular to the axial direction of the monocrystalline silicon to be irradiated, in the monocrystalline silicon to be irradiated serves as an irradiated surface, and irradiation is conducted for a preset duration; and turning over the monocrystalline silicon to be irradiated, taking a second surface, which is vertical to the axial direction of the monocrystalline silicon to be irradiated, in the monocrystalline silicon to be irradiated as an irradiated surface, and irradiating for the preset duration to obtain the irradiated and doped monocrystalline silicon. 本申请的实施例提供一种