Method for improving copper filling capability

The invention provides a method for improving copper filling capacity, which comprises the following steps of: S1, placing a wafer at an entering waiting position of electroplating operation, and preparing to enter electroplating liquid; s2, the wafer is overturned to form a certain inclination angle with the electroplating liquid level, and the wafer is conveyed to a preset position in the electroplating liquid in a high descending speed and rotating speed mode; and S3, growing a copper main body layer through electroplating operation. According to the invention, the wafer is more quickly soaked in the electroplating liquid by adopting a mode of high descending speed and rotating speed, and low protection voltage can be applied to the wafer, so that the void defect appearing in a copper main body layer growing in the electroplating operation due to non-uniform in-plane current distribution is obviously improved. 本申请提供一种提升铜填充能力的方法，包括：步骤S1，将晶圆置于电镀作业的进入等待位置，准备进入电镀液；步骤S2，将晶圆翻转至与电镀液面呈一定倾斜角度，采用高下降速度和旋转速度的方式将晶圆送至电镀