Semiconductor device, manufacturing method thereof, packaging structure and electronic equipment

The invention provides a semiconductor device, a manufacturing method thereof, a packaging structure and electronic equipment, and aims to improve the heat dissipation performance and reliability of the semiconductor device. The semiconductor device comprises a substrate and a protection layer, a first semiconductor layer, a first barrier layer, a second barrier layer and a channel layer which are sequentially arranged on the substrate, a source electrode, a drain electrode and a grid electrode are arranged on the side, away from the substrate, of the channel layer, and the grid electrode is located between the source electrode and the drain electrode; the material of the substrate contains a diamond component; the first barrier layer is made of indium aluminum gallium nitride, and the second barrier layer is made of aluminum nitride. 本申请提供了一种半导体器件及其制作方法、封装结构、电子设备，用以提高半导体器件的散热性以及可靠性。半导体器件包括衬底以及依次设置于衬底的保护层、第一半导体层、第一势垒层、第二势垒层以及沟道层，沟道层背离衬底的一侧设置有源极、漏极和栅极，栅极位于源极与漏极之间；衬底的材质中具有金刚石成分；第一势垒层的材质为铟铝镓氮，第二势垒层的材质为氮化铝。