Microelectronic device and related memory device and electronic system

The invention relates to a microelectronic device, a memory device and an electronic system. A microelectronic device includes: a substrate structure; the memory array is positioned on the substrate structure; and a conductive pad level over the memory array. The base structure includes a logic region including a logic device. The memory array includes vertically extending strings of memory cells within a horizontal region of the logic region of the base structure. The conductive pad level includes: a first conductive pad substantially outside the horizontal region of the logic region of the substrate structure; and a second conductive pad horizontally adjacent to the first conductive pad and within the horizontal region of the logic region of the base structure. 本申请涉及微电子装置、存储器装置和电子系统。一种微电子装置包括：基底结构；存储器阵列，其位于所述基底结构之上；以及导电衬垫层次，其位于所述存储器阵列之上。所述基底结构包括包含逻辑装置的逻辑区。所述存储器阵列包括所述基底结构的所述逻辑区的水平区域内的竖直延伸存储器单元串。所述导电衬垫层次包括：第一导电衬垫，其大体上在所述基底结构的所述逻辑区的所述水平区域外部；以及第二导电衬垫，其与所述第一导电衬垫水平相邻且在所述基底结构的所述逻辑区的所述水平区域内。