Memory device

The invention relates to a memory device. A memory device and a method of operating the same are provided herein. The memory device includes: a memory cell array including a plurality of memory cells; a peripheral circuit configured to perform a program operation for storing data in a selected memory cell among the plurality of memory cells; and a control logic circuit configured to control the peripheral circuit to form threshold voltage distributions respectively corresponding to target program states corresponding to data to be stored in the selected memory cells, when a pre-verify operation for any one of the target program states of the selected memory cell has passed, the control logic circuit controls the peripheral circuit to perform a main verify operation for the any one of the target program states. 本申请涉及存储器装置。本文提供了一种存储器装置和操作该存储器装置的方法。所述存储器装置包括：存储器单元阵列，其包括多个存储器单元；外围电路，其被配置为执行用于将数据存储在多个存储器单元中的被选存储器单元中的编程操作；以及控制逻辑电路，其被配置为控制所述外围电路形成分别对应于目标编程状态的阈值电压分布，所述目标编程状态对应于要存储在被选存储器单元中的数据，其中，当针对被选存储器单元的目标编程状态中的任何