Image sensor and forming method thereof

The invention provides an image sensor and a forming method thereof. The image sensor includes a substrate, an isolation structure on the substrate, a photoelectric conversion layer, a transparent electrode layer, a sealing layer, a filter layer, and a microlens layer. The isolation structure is non...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GUO XINHONG, ZHANG YUQI, WU QINGQIANG, CAI WEILONG, CAI HONGREN, WU HANLIN, CHEN HUANGREN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides an image sensor and a forming method thereof. The image sensor includes a substrate, an isolation structure on the substrate, a photoelectric conversion layer, a transparent electrode layer, a sealing layer, a filter layer, and a microlens layer. The isolation structure is non-conductive and defines a plurality of pixel regions on the substrate. The isolation structure prevents crosstalk of electrical signals between the pixel regions. The photoelectric conversion layer is disposed in a pixel region defined by the isolation structure. The transparent electrode layer is disposed on the isolation structure and the photoelectric conversion layer. The sealing layer is arranged on the transparent electrode layer. The microlens layer is disposed on the filter layer. 本发明提供了一种影像感测器及其形成方法。影像感测器包括:基板、基板上的隔离结构、光电转换层、透明电极层、密封层、滤光层、及微透镜层。隔离结构不导电且在基板上定义出多个像素区。隔离结构在像素区之间防止电信号的串扰。光电转换层设置于由隔离结构定义出的像素区。透明电极层设置于隔离结构与光电转换层上。密封层设置于透明电极层上。微透镜层设置于滤光层上。