Semiconductor structure and forming method of semiconductor structure

The invention discloses a semiconductor structure and a forming method of the semiconductor structure. The method comprises the steps of providing a substrate; a plurality of core structures are formed on a substrate, the core structures are arranged at equal intervals, each core structure comprises a first core layer and a second core layer which are connected with each other, the first core layers are parallel to a first direction, the first direction is parallel to the surface of the substrate, and the included angle between each first core layer and the corresponding second core layer is an obtuse angle. The plurality of first core layers are parallel to each other, and the plurality of second core layers are parallel to each other; forming a first word line layer on the substrate, wherein the pattern of the first word line layer is a pattern formed by the first core layer through a self-aligned double pattern technology; second word line layers are formed on the substrate, the first word line layers and