SiC semiconductor device

A SiC semiconductor device includes: a SiC chip having a main surface including a first surface, a second surface recessed at a first depth in a thickness direction of the first surface outward, and a connection surface connecting the first surface and the second surface, the SiC chip having a land defined by the first surface, the second surface, and the connection surface; a transistor structure that includes a trench gate structure having a second depth smaller than the first depth, and a trench source structure that has a third depth exceeding the second depth and is adjacent to the trench gate structure in one direction, and that is formed in an inner portion of the first surface; and a dummy structure that includes a plurality of dummy trench source structures that each have the third depth and are adjacent to each other in the one direction, and that is formed on a peripheral edge portion of the first surface. SiC半导体装置包括：SiC芯片，其具有主面，该主面包含第一面、在上述第一面外向厚度方向以第一深度凹陷的第二面、以及连接上述第一面及上述第二面的连接面，且由上述第一面、上述第二面以及上述