SiC semiconductor device

This SiC semiconductor device is provided with: a SiC chip that has a main surface that includes a first surface, a second surface that is recessed in the thickness direction from the outside of the first surface, and a connection surface that connects the first surface and the second surface, and that defines a land by the first surface, the second surface, and the connection surface; a trench structure formed on the first surface so as to be exposed from the connection surface; and a side wall wiring which is formed on the second surface so as to cover the connection surface, and which is electrically connected to the trench structure. SiC半导体装置包括：SiC芯片，其具有主面，该主面包含第一面、在上述第一面外向厚度方向凹陷的第二面、以及连接上述第一面及上述第二面的连接面，且由上述第一面、上述第二面以及上述连接面划分出台地；沟槽构造，其以从上述连接面露出的方式形成于上述第一面；以及侧壁配线，其以包覆上述连接面的方式形成于上述第二面之上，且与上述沟槽构造电连接。