METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS

Provided is a method for manufacturing a semiconductor device capable of suppressing fluctuations in the thickness of an oxide film between a plurality of SiC wafers. The invention also relates to a semiconductor manufacturing device. After a first inorganic film is formed on the lower surfaces of the plurality of silicon carbide wafers, the plurality of silicon carbide wafers are etched such that the thickness of the first inorganic film remains at 750 nm or more, and after the etching, a thermal oxidation treatment is performed to form an oxide film on the upper surfaces of the plurality of silicon carbide wafers. A thermal oxidation treatment is performed in a state in which at least one wafer including a dummy wafer and/or a monitor wafer and a plurality of silicon carbide wafers are aligned in one direction and the upper surfaces of the plurality of silicon carbide wafers are aligned in one direction. A first silicon carbide wafer among the plurality of silicon carbide wafers is disposed directly below a