Silicon nanowire gyroscope and processing technology thereof

The invention relates to a silicon nanowire gyroscope and a processing technology thereof. The silicon nanowire gyroscope comprises an SOI silicon wafer, the SOI silicon wafer comprises top-layer silicon, a middle buried oxide layer and bottom-layer bulk silicon, and a silicon nitride film is arranged on the surface of the top-layer silicon; wherein a suspended mass block and three silicon nanowires connected with the mass block are formed on the top silicon layer, and the silicon nanowires are distributed along the peripheral side of the mass block; silicon nitride films are attached to the surfaces of the mass block and the silicon nanowires; a positive electrode and a negative electrode which are conductively connected with the bulk silicon are arranged on the top-layer silicon; the SOI silicon wafer is also provided with an isolation channel which is etched from the silicon nitride thin film to the buried oxide layer so as to realize physical isolation of the positive electrode and the negative electrode.