Method for improving synthesis efficiency of silicon carbide powder
The invention discloses a method for improving synthesis efficiency of silicon carbide powder, which comprises the following steps: doped powder, carbon powder and silicon powder are provided, the doped powder is a material which does not pollute the silicon carbide powder, and the thermal conductiv...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for improving synthesis efficiency of silicon carbide powder, which comprises the following steps: doped powder, carbon powder and silicon powder are provided, the doped powder is a material which does not pollute the silicon carbide powder, and the thermal conductivity of the doped powder is greater than that of the carbon powder; filling the crucible with carbon powder, silicon powder and doped powder according to a preset mixing mode and a preset filling mode, wherein the doped powder is used for reducing the radial temperature gradient in the process of synthesizing the silicon carbide powder from the raw materials in the crucible; and putting the crucible into a silicon carbide synthesis device, and carrying out a silicon carbide synthesis process based on a self-propagating method. The radial temperature gradient in the process of synthesizing the silicon carbide powder from the raw materials in the crucible is reduced, and the synthesis efficiency of the silicon carbide |
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