Power self-adaptive discharging circuit based on field effect transistor variable resistance region

The invention provides a power self-adaptive discharge circuit based on a variable resistance region of a field effect transistor, which comprises the field effect transistor, the field effect transistor works in the variable resistance region and is provided with a first end, a second end and a con...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TAN RUNQIN, CHEN BIAO, CHEN NINGKAI, RUAN JIANCONG
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention provides a power self-adaptive discharge circuit based on a variable resistance region of a field effect transistor, which comprises the field effect transistor, the field effect transistor works in the variable resistance region and is provided with a first end, a second end and a control end, and the first end and the second end of the field effect transistor are respectively coupled with a node and a reference ground and are used for discharging the node. The control end of the field-effect tube is coupled with a control signal, when the node voltage is reduced, the voltage of the control signal is increased, and the equivalent resistance of the field-effect tube is reduced, so that the discharge resistance can be reduced along with the reduction of the node voltage, and according to P = U2/R, the discharge circuit can maintain the stable discharge power in the whole discharge process, and the discharge efficiency is improved. The problem that the service life of the chip is affected due to s