SEMICONDUCTOR IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME

The embodiment of the invention discloses a semiconductor image sensor device and a method of manufacturing the same. The semiconductor image sensing device includes a substrate, first and second pixels, and an isolation structure. A first pixel and a second pixel are disposed in a substrate, where the first and second pixels are adjacent pixels. An isolation structure is disposed in the substrate and between the first and second pixels, where the isolation structure includes a dielectric layer, and the dielectric layer includes silicon oxycarbonitride (SiOCN). 本发明的实施例公开了半导体图像传感器件及其制造方法。半导体图像传感器件包括衬底、第一像素和第二像素、以及隔离结构。第一像素和第二像素设置在衬底中，其中，第一和第二像素为相邻像素。隔离结构设置在衬底中并且介于第一和第二像素之间，其中，隔离结构包括介电层，并且介电层包括碳氧氮化硅(SiOCN)。