Method for improving contact resistance of two-dimensional semiconductor and field effect transistor

The invention provides a method for improving the contact resistance of a two-dimensional semiconductor and a field effect transistor, and the method comprises the steps: arranging a bottom electrode at the bottom of the two-dimensional semiconductor, arranging a top electrode at the top of the two-dimensional semiconductor, and forming a memristor structure of the top electrode/the two-dimensional semiconductor/the bottom electrode, and the overlapped part of the top electrode and the bottom electrode, which is not covered by the two-dimensional semiconductor, is filled with hafnium oxide so as to prevent short circuit. On the basis of the soft breakdown effect in the memristor, vacancy defects in a two-dimensional semiconductor are induced by an electric field to form conductive filaments, and a directional, controllable and universal method for improving the contact resistance is shown. The effect comes from Fermi level rearrangement of the two-dimensional semiconductor and the bottom electrode caused by t