Crimping type IGBT (Insulated Gate Bipolar Translator) module

A conductive liquid structural body is arranged in an inner cavity between an emitter electrode and a collector electrode, when any chip fails, a failure point of the chip and an upper molybdenum sheet of the failed chip generate an electric arc for burning through a shell, and conductive liquid flows out from the burning-through position to cover all the chips in the inner cavity and the peripheral space of the chips, so that the chip failure point of the chip and the upper molybdenum sheet of the failed chip fail. Therefore, the covered conductive structure is short-circuited, good stable short circuit of the emitter electrode and the collector electrode is realized, and the crimping type IGBT module has a stable long-term short circuit failure function. 本发明公开了一种压接式IGBT模块，本发明在发射极电极和集电极电极之间的内腔内设置导电液结构体，在任一芯片失效时，芯片失效点与失效芯片的上钼片产生烧穿壳体的电弧，导电液从烧穿处流出，覆盖内腔内所有芯片及芯片周边空间，从而短接覆盖的导电结构，实现发射极电极和集电极电极的良好稳固性短路，使压接式IGBT模块具有稳定的长期短路失效功能。