Reworking process of defective wafer after HJT amorphous silicon coating

The invention provides a reworking process of a poor HJT amorphous silicon coated sheet. The reworking process of the poor HJT amorphous silicon coated sheet is characterized by comprising the following steps: P1.1 water washing, P1.2 CP acid pickling, P1.3 pre-cleaning, P1.4 texturing, P1.5 SC1 liquid cleaning, P1.6 SC2 liquid cleaning, P1.7 hydrofluoric acid washing, P1.8 slow lifting and P1.9 drying. According to the reworking process, an amorphous silicon film layer on the surface is removed through acid pickling of a nitric acid and hydrofluoric acid mixed solution, and after pre-cleaning, texturing and re-texturing cleaning of an SC1/SC2 solution, a textured surface is formed on the surface of a reworked silicon wafer again. Therefore, the reworking process can be used for reworking the defective pieces plated with the amorphous silicon thin film layers in batches and then putting the defective pieces into production again, the electrical property of the produced battery piece is equivalent to that of a