Reworking process of defective HJT battery piece
The invention provides a reworking process of an HJT battery defective piece. The reworking process comprises the following steps: P1, collecting the defective piece to enter a cleaning machine special for reworking, and removing a surface film; and P2, enabling the silicon piece obtained in the P1...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a reworking process of an HJT battery defective piece. The reworking process comprises the following steps: P1, collecting the defective piece to enter a cleaning machine special for reworking, and removing a surface film; and P2, enabling the silicon piece obtained in the P1 to enter the cleaning machine for re-texturing. The reworking process of the defective piece of the HJT battery is suitable for reworking of the defective piece generated after ITO, ATO or Cu semiconductor or metal film layers are plated. Firstly, a mixed solution of hydrochloric acid and hydrogen peroxide is used for removing a battery piece surface film and a battery grid line; and processing the amorphous silicon film by using a mixed solution of nitric acid and hydrofluoric acid to remove the amorphous silicon film layer, and texturing the silicon wafer again to obtain the silicon wafer which can be put into production again after reworking. Therefore, the reworking process effectively solves the reworking prob |
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