Single crystal texturing process in HJT battery production

The invention discloses a single crystal texturing process in HJT battery production, and the method comprises the following steps: washing a silicon wafer with pure water to remove dirt on the surface; pre-cleaning the silicon wafer; the pretreated silicon wafer is subjected to texturing after bein...

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Bibliographische Detailangaben
Hauptverfasser:	ZHANG XIAOSEN, LIN YANYAN, ZHUANG HUIHU, XU HAITANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY CRYSTAL GROWTH DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE RECOVERY OF GLYCEROL REFINING BY ZONE-MELTING OF MATERIAL RESIN SOAPS SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SOAP OR SOAP-MAKING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL USE OF SINGLE SUBSTANCES AS DETERGENTS
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Beschreibung
Zusammenfassung:	The invention discloses a single crystal texturing process in HJT battery production, and the method comprises the following steps: washing a silicon wafer with pure water to remove dirt on the surface; pre-cleaning the silicon wafer; the pretreated silicon wafer is subjected to texturing after being washed with pure water, and a uniform textured surface is formed; after washing with pure water, carrying out primary cleaning on the textured silicon wafer by using a mixed solution of potassium hydroxide and hydrogen peroxide; washing the textured silicon wafer with pure water and then carrying out secondary cleaning on the textured silicon wafer by using a mixed solution of hydrochloric acid and hydrogen peroxide; washing the silicon wafer with a hydrofluoric acid solution after washing with pure water, and washing with pure water after the purpose of dehydration is achieved; slowly lifting the silicon wafer with pure water, and pre-drying; and drying the obtained silicon wafer. Compared with the traditional s