Memory device for performing program operation and operating method thereof

The invention relates to a memory device for performing a program operation and an operating method thereof. Provided herein may be a memory device and a method of operating the memory device. The memory device may include: a plurality of memory cells coupled between a common source line and a bit line; a peripheral circuit configured to perform a plurality of program loops, each program loop including a program voltage application operation to apply a program voltage to the selected memory cell and a verification operation to verify a program state of the selected memory cell; and a control logic configured to control the peripheral circuit in a program voltage application operation to apply a pre-charge voltage to the common source line, and change at least one of an amplitude of the pre-charge voltage and a time at which the pre-charge voltage is applied according to an amplitude of the program voltage. 本申请涉及用于执行编程操作的存储器装置及其操作方法。本文提供的可以是存储器装置及操作该存储器装置的方法。存储器装置可以包括：多个存储器单元，其联接在公共源极线和位线之间；外围电路，其被配置为执行多个编程循环，