Method and device for monitoring abnormity of polycrystalline silicon and related equipment
The invention provides a polycrystalline silicon abnormity monitoring method and device and related equipment, and the method comprises the steps: obtaining a first monitoring image, the first monitoring image comprises an image of a first position, and the first position is a position used for plac...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a polycrystalline silicon abnormity monitoring method and device and related equipment, and the method comprises the steps: obtaining a first monitoring image, the first monitoring image comprises an image of a first position, and the first position is a position used for placing a silicon rod in a reaction furnace; performing image analysis on the first monitoring image to obtain a plurality of candidate points; the pixel points with the corresponding pixel coordinates located in a preset interval in the candidate points are determined as abnormal points, the preset interval is used for indicating the first position, and the abnormal points are used for indicating the silicon rod bright points; and marking the abnormal point on the first monitoring image. The method comprises the following steps: firstly, acquiring a plurality of candidate points with abnormal pixel values from a first monitoring image in an image analysis mode; and the candidate points in the preset interval are deter |
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