Method for manufacturing semiconductor device

Provided is a method for manufacturing a semiconductor chip capable of sufficiently suppressing the formation of a conductive material on a bump formation surface even if the conductive material for forming a shield layer is wound around the bump formation surface side of a semiconductor wafer. This method for manufacturing a semiconductor device includes the following step (A). Step (A): A step for forming a shield layer on a semiconductor chip in which a bump-forming surface of a semiconductor wafer provided with bumps is protected by a protective layer formed from a cured product of a curable resin, the shield layer being formed on the semiconductor chip in a state in which at least one of the bumps and the bump-forming surface is covered by a covering sheet. A shielding layer is formed on at least a part of a portion of the semiconductor chip exposed from the covering sheet. 本发明提供即使用以形成屏蔽层的导电材料绕入到了半导体晶片的凸块形成面侧也能够充分抑制在凸块形成面上形成导电材料的半导体芯片的制造方法。该方法是包括下述工序(A)的半导体装置的制造方法。工序(A)：在设置有凸块的半导体晶片的凸块形成面被由固化性树脂的固化物形成的保护