Manufacturing method of flip-chip light-emitting diode device with high light extraction rate and product of flip-chip light-emitting diode device

The invention relates to a manufacturing method of a flip chip type light emitting diode device with high light extraction rate. The manufacturing method comprises the following steps of: (a ') removing an epitaxial substrate to expose a light extraction side of a flip chip type light emitting diode crystal grain; (a) patterning the light emitting side of the flip-chip light emitting diode crystal grain from which the epitaxial substrate is removed so as to form a micron-scale to nano-scale pattern on the light emitting side; (b) filling a wavelength conversion component in the micron-scale to nano-scale pattern on the light emitting side, wherein the wavelength conversion component is selected from quantum dots or fluorescent powder with the size between micron and nano; and (c) depositing a protective layer on the wavelength conversion member by using an atomic layer deposition method, and enabling the protective layer to cover the micron-scale to nano-scale pattern and the wavelength conversion member on t