Silicon carbide power device with gradually varied floating junction thickness

The invention relates to a silicon carbide power device with gradually varied floating junction thickness. The silicon carbide power device comprises an N + silicon carbide substrate layer; the N-silicon carbide epitaxial layer is located on the N + silicon carbide substrate layer; the A-layer P-typ...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG DONG, WU YONG, HAN CHAO, YUAN HAO, BAI BOYI, CHEN XING, HUANG YONG, LIU XIONG, TAO LI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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