Silicon carbide power device with gradually varied floating junction thickness

The invention relates to a silicon carbide power device with gradually varied floating junction thickness. The silicon carbide power device comprises an N + silicon carbide substrate layer; the N-silicon carbide epitaxial layer is located on the N + silicon carbide substrate layer; the A-layer P-type silicon carbide floating junction layer is arranged in the N-silicon carbide epitaxial layer along the vertical direction, each P-type silicon carbide floating junction layer comprises B P-type silicon carbide floating junction structures, and the P-type silicon carbide floating junction structures are symmetrical along the central axis and are structures with gradually changed thicknesses; the back electrode is located on the lower surface of the N + silicon carbide substrate layer; the front electrode is located on the N-silicon carbide epitaxial layer. According to the invention, the thickness of the floating junction is gradually increased from the center of the floating junction to the edge of the floating j