Silicon carbide power device with gradually varied floating junction thickness
The invention relates to a silicon carbide power device with gradually varied floating junction thickness. The silicon carbide power device comprises an N + silicon carbide substrate layer; the N-silicon carbide epitaxial layer is located on the N + silicon carbide substrate layer; the A-layer P-typ...
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| creator | WANG DONG WU YONG HAN CHAO YUAN HAO BAI BOYI CHEN XING HUANG YONG LIU XIONG TAO LI |
| description | The invention relates to a silicon carbide power device with gradually varied floating junction thickness. The silicon carbide power device comprises an N + silicon carbide substrate layer; the N-silicon carbide epitaxial layer is located on the N + silicon carbide substrate layer; the A-layer P-type silicon carbide floating junction layer is arranged in the N-silicon carbide epitaxial layer along the vertical direction, each P-type silicon carbide floating junction layer comprises B P-type silicon carbide floating junction structures, and the P-type silicon carbide floating junction structures are symmetrical along the central axis and are structures with gradually changed thicknesses; the back electrode is located on the lower surface of the N + silicon carbide substrate layer; the front electrode is located on the N-silicon carbide epitaxial layer. According to the invention, the thickness of the floating junction is gradually increased from the center of the floating junction to the edge of the floating j |
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The silicon carbide power device comprises an N + silicon carbide substrate layer; the N-silicon carbide epitaxial layer is located on the N + silicon carbide substrate layer; the A-layer P-type silicon carbide floating junction layer is arranged in the N-silicon carbide epitaxial layer along the vertical direction, each P-type silicon carbide floating junction layer comprises B P-type silicon carbide floating junction structures, and the P-type silicon carbide floating junction structures are symmetrical along the central axis and are structures with gradually changed thicknesses; the back electrode is located on the lower surface of the N + silicon carbide substrate layer; the front electrode is located on the N-silicon carbide epitaxial layer. According to the invention, the thickness of the floating junction is gradually increased from the center of the floating junction to the edge of the floating j</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230113&DB=EPODOC&CC=CN&NR=115602707A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230113&DB=EPODOC&CC=CN&NR=115602707A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WANG DONG</creatorcontrib><creatorcontrib>WU YONG</creatorcontrib><creatorcontrib>HAN CHAO</creatorcontrib><creatorcontrib>YUAN HAO</creatorcontrib><creatorcontrib>BAI BOYI</creatorcontrib><creatorcontrib>CHEN XING</creatorcontrib><creatorcontrib>HUANG YONG</creatorcontrib><creatorcontrib>LIU XIONG</creatorcontrib><creatorcontrib>TAO LI</creatorcontrib><title>Silicon carbide power device with gradually varied floating junction thickness</title><description>The invention relates to a silicon carbide power device with gradually varied floating junction thickness. The silicon carbide power device comprises an N + silicon carbide substrate layer; the N-silicon carbide epitaxial layer is located on the N + silicon carbide substrate layer; the A-layer P-type silicon carbide floating junction layer is arranged in the N-silicon carbide epitaxial layer along the vertical direction, each P-type silicon carbide floating junction layer comprises B P-type silicon carbide floating junction structures, and the P-type silicon carbide floating junction structures are symmetrical along the central axis and are structures with gradually changed thicknesses; the back electrode is located on the lower surface of the N + silicon carbide substrate layer; the front electrode is located on the N-silicon carbide epitaxial layer. According to the invention, the thickness of the floating junction is gradually increased from the center of the floating junction to the edge of the floating j</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EOgjAQgOEuDkZ9h_MBTECjzIZgnFh0J-f1gIOmbdoC8e118AGc_uX716p-iBFyFgjDSzSDdwsH0DwLMSySeugC6gmNecOMQVhDaxwmsR0Mk6Uk3zn1QqPlGLdq1aKJvPt1o_a36lneD-xdw9EjseXUlHWeny_ZsciK6-kf8wFM7DcN</recordid><startdate>20230113</startdate><enddate>20230113</enddate><creator>WANG DONG</creator><creator>WU YONG</creator><creator>HAN CHAO</creator><creator>YUAN HAO</creator><creator>BAI BOYI</creator><creator>CHEN XING</creator><creator>HUANG YONG</creator><creator>LIU XIONG</creator><creator>TAO LI</creator><scope>EVB</scope></search><sort><creationdate>20230113</creationdate><title>Silicon carbide power device with gradually varied floating junction thickness</title><author>WANG DONG ; WU YONG ; HAN CHAO ; YUAN HAO ; BAI BOYI ; CHEN XING ; HUANG YONG ; LIU XIONG ; TAO LI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115602707A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WANG DONG</creatorcontrib><creatorcontrib>WU YONG</creatorcontrib><creatorcontrib>HAN CHAO</creatorcontrib><creatorcontrib>YUAN HAO</creatorcontrib><creatorcontrib>BAI BOYI</creatorcontrib><creatorcontrib>CHEN XING</creatorcontrib><creatorcontrib>HUANG YONG</creatorcontrib><creatorcontrib>LIU XIONG</creatorcontrib><creatorcontrib>TAO LI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WANG DONG</au><au>WU YONG</au><au>HAN CHAO</au><au>YUAN HAO</au><au>BAI BOYI</au><au>CHEN XING</au><au>HUANG YONG</au><au>LIU XIONG</au><au>TAO LI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Silicon carbide power device with gradually varied floating junction thickness</title><date>2023-01-13</date><risdate>2023</risdate><abstract>The invention relates to a silicon carbide power device with gradually varied floating junction thickness. The silicon carbide power device comprises an N + silicon carbide substrate layer; the N-silicon carbide epitaxial layer is located on the N + silicon carbide substrate layer; the A-layer P-type silicon carbide floating junction layer is arranged in the N-silicon carbide epitaxial layer along the vertical direction, each P-type silicon carbide floating junction layer comprises B P-type silicon carbide floating junction structures, and the P-type silicon carbide floating junction structures are symmetrical along the central axis and are structures with gradually changed thicknesses; the back electrode is located on the lower surface of the N + silicon carbide substrate layer; the front electrode is located on the N-silicon carbide epitaxial layer. According to the invention, the thickness of the floating junction is gradually increased from the center of the floating junction to the edge of the floating j</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Silicon carbide power device with gradually varied floating junction thickness |
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