Gas supply device of silicon carbide epitaxial chemical vapor deposition system

The invention relates to the field of chemical vapor deposition, in particular to a silicon carbide epitaxial chemical vapor deposition system gas supply device which comprises a base plate, a precipitation cylinder, a sealing cover, a gas inlet pipe, a pressurizing bin, a gas supply mechanism and supporting legs. The device solves the problems that in the process of silicon carbide chemical vapor deposition, multi-layer and multi-station independent flow division is difficult to carry out on various reaction gases, so that non-uniform mixing among the various reaction gases in a chemical vapor deposition reaction area is easily caused; the problems of large concentration difference of a single reaction gas at different positions in a chemical vapor deposition reaction area are solved, and the problems of synchronism difference of the chemical vapor deposition reaction at the end surface position of the silicon carbide crystal plate and different thicknesses of reaction precipitates at different area position