Near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and preparation method thereof
The invention discloses a near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and a preparation method thereof, the chemical formula is Ga2-x-2yO3: xCr < 3 + >, yM < + > and yP < 5 + >, M is any one of Li, Na and K, x is more than or equal to 0.01 and less...
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| creator | LI XINYUE MAO QINAN ZHU YIWEN ZHAO HONGTING ZHONG JIASONG DENG DEGANG YU HUA CHEN LEIFENG |
| description | The invention discloses a near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and a preparation method thereof, the chemical formula is Ga2-x-2yO3: xCr < 3 + >, yM < + > and yP < 5 + >, M is any one of Li, Na and K, x is more than or equal to 0.01 and less than or equal to 0.1, and y is more than or equal to 0.1 and less than or equal to 0.5. The preparation method adopts a high-temperature solid-phase method. The method has the advantage that the luminous intensity of Ga2O3: Cr < 3 + > can be obviously improved by adding alkali metal ions (any one of Li, Na and K) and phosphorus ions (P < 5 + >) into the raw materials. The luminescent material is a single-matrix fluorescent material, the emission spectrum of the luminescent material is a near-infrared broadband spectrum of which the peak wavelength is 712 nanometers under the excitation of near ultraviolet to blue light, and the luminescent material can be applied to a broadband near-infrared light source photochromic conversion material t |
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The preparation method adopts a high-temperature solid-phase method. The method has the advantage that the luminous intensity of Ga2O3: Cr < 3 + > can be obviously improved by adding alkali metal ions (any one of Li, Na and K) and phosphorus ions (P < 5 + >) into the raw materials. The luminescent material is a single-matrix fluorescent material, the emission spectrum of the luminescent material is a near-infrared broadband spectrum of which the peak wavelength is 712 nanometers under the excitation of near ultraviolet to blue light, and the luminescent material can be applied to a broadband near-infrared light source photochromic conversion material t]]></description><language>chi ; eng</language><subject>ADHESIVES ; CHEMISTRY ; DYES ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230113&DB=EPODOC&CC=CN&NR=115595152A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230113&DB=EPODOC&CC=CN&NR=115595152A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI XINYUE</creatorcontrib><creatorcontrib>MAO QINAN</creatorcontrib><creatorcontrib>ZHU YIWEN</creatorcontrib><creatorcontrib>ZHAO HONGTING</creatorcontrib><creatorcontrib>ZHONG JIASONG</creatorcontrib><creatorcontrib>DENG DEGANG</creatorcontrib><creatorcontrib>YU HUA</creatorcontrib><creatorcontrib>CHEN LEIFENG</creatorcontrib><title>Near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and preparation method thereof</title><description><![CDATA[The invention discloses a near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and a preparation method thereof, the chemical formula is Ga2-x-2yO3: xCr < 3 + >, yM < + > and yP < 5 + >, M is any one of Li, Na and K, x is more than or equal to 0.01 and less than or equal to 0.1, and y is more than or equal to 0.1 and less than or equal to 0.5. The preparation method adopts a high-temperature solid-phase method. The method has the advantage that the luminous intensity of Ga2O3: Cr < 3 + > can be obviously improved by adding alkali metal ions (any one of Li, Na and K) and phosphorus ions (P < 5 + >) into the raw materials. The luminescent material is a single-matrix fluorescent material, the emission spectrum of the luminescent material is a near-infrared broadband spectrum of which the peak wavelength is 712 nanometers under the excitation of near ultraviolet to blue light, and the luminescent material can be applied to a broadband near-infrared light source photochromic conversion material t]]></description><subject>ADHESIVES</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLsKwkAQRdNYiPoPYy0pkrCFQQQJPqrY2IchuSEL2dlldv1_I_gBVhcO59x1hhasuZVRWTEQnI3ReiHIxNIv5M7ls6qpUTpRRQc60_x2VhB7SCLHCWp5JpaBgiKwcvr2DmnyA6UJCj9us9XIc8Tut5tsf7u-mkeO4DvEwMsZUte0RWHM0RSmvFT_OB_YGD0K</recordid><startdate>20230113</startdate><enddate>20230113</enddate><creator>LI XINYUE</creator><creator>MAO QINAN</creator><creator>ZHU YIWEN</creator><creator>ZHAO HONGTING</creator><creator>ZHONG JIASONG</creator><creator>DENG DEGANG</creator><creator>YU HUA</creator><creator>CHEN LEIFENG</creator><scope>EVB</scope></search><sort><creationdate>20230113</creationdate><title>Near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and preparation method thereof</title><author>LI XINYUE ; MAO QINAN ; ZHU YIWEN ; ZHAO HONGTING ; ZHONG JIASONG ; DENG DEGANG ; YU HUA ; CHEN LEIFENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115595152A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>ADHESIVES</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><toplevel>online_resources</toplevel><creatorcontrib>LI XINYUE</creatorcontrib><creatorcontrib>MAO QINAN</creatorcontrib><creatorcontrib>ZHU YIWEN</creatorcontrib><creatorcontrib>ZHAO HONGTING</creatorcontrib><creatorcontrib>ZHONG JIASONG</creatorcontrib><creatorcontrib>DENG DEGANG</creatorcontrib><creatorcontrib>YU HUA</creatorcontrib><creatorcontrib>CHEN LEIFENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI XINYUE</au><au>MAO QINAN</au><au>ZHU YIWEN</au><au>ZHAO HONGTING</au><au>ZHONG JIASONG</au><au>DENG DEGANG</au><au>YU HUA</au><au>CHEN LEIFENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and preparation method thereof</title><date>2023-01-13</date><risdate>2023</risdate><abstract><![CDATA[The invention discloses a near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and a preparation method thereof, the chemical formula is Ga2-x-2yO3: xCr < 3 + >, yM < + > and yP < 5 + >, M is any one of Li, Na and K, x is more than or equal to 0.01 and less than or equal to 0.1, and y is more than or equal to 0.1 and less than or equal to 0.5. The preparation method adopts a high-temperature solid-phase method. The method has the advantage that the luminous intensity of Ga2O3: Cr < 3 + > can be obviously improved by adding alkali metal ions (any one of Li, Na and K) and phosphorus ions (P < 5 + >) into the raw materials. The luminescent material is a single-matrix fluorescent material, the emission spectrum of the luminescent material is a near-infrared broadband spectrum of which the peak wavelength is 712 nanometers under the excitation of near ultraviolet to blue light, and the luminescent material can be applied to a broadband near-infrared light source photochromic conversion material t]]></abstract><oa>free_for_read</oa></addata></record> |
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| title | Near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and preparation method thereof |
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