Near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and preparation method thereof

The invention discloses a near-infrared emission enhanced Ga2O3: Cr < 3 + > luminescent material and a preparation method thereof, the chemical formula is Ga2-x-2yO3: xCr < 3 + >, yM < + > and yP < 5 + >, M is any one of Li, Na and K, x is more than or equal to 0.01 and less than or equal to 0.1, and y is more than or equal to 0.1 and less than or equal to 0.5. The preparation method adopts a high-temperature solid-phase method. The method has the advantage that the luminous intensity of Ga2O3: Cr < 3 + > can be obviously improved by adding alkali metal ions (any one of Li, Na and K) and phosphorus ions (P < 5 + >) into the raw materials. The luminescent material is a single-matrix fluorescent material, the emission spectrum of the luminescent material is a near-infrared broadband spectrum of which the peak wavelength is 712 nanometers under the excitation of near ultraviolet to blue light, and the luminescent material can be applied to a broadband near-infrared light source photochromic conversion material t