Method and device for stripping silicon carbide crystal ingot by laser

The invention discloses a method and device for stripping a silicon carbide crystal ingot by laser, and the method comprises the following steps: firstly, aligning a laser focus to a preset plane in the crystal ingot, and carrying out secondary laser processing on the preset plane by laser according to a set direction and a scanning line interval so as to form a plurality of explosion points on the plane to prepare a modified layer; then a xenon lamp is used for conducting irradiation heating on the modified layer, and after heating is completed, pulling force which is opposite in direction and perpendicular to the end face is applied to the two ends of the crystal ingot to strip the wafer from the silicon carbide crystal ingot. According to the method, the tensile stress required by stripping is greatly reduced, the stripping stability is improved, meanwhile, a relatively flat stripping surface is formed on the wafer, the roughness of the stripping surface is reduced, the material loss of subsequent grinding