Method for manufacturing semiconductor device

The invention provides a manufacturing method of a semiconductor device. The method includes the steps of patterning a fin in a multi-film layer stack, and forming an opening in the fin and into a substrate. A first semiconductor material is epitaxially grown from the channel exposed along the sidew...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN YANTING, LI WEIYANG, LIN BAISHAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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