Method for manufacturing semiconductor device

The invention provides a manufacturing method of a semiconductor device. The method includes the steps of patterning a fin in a multi-film layer stack, and forming an opening in the fin and into a substrate. A first semiconductor material is epitaxially grown from the channel exposed along the sidewalls of the opening to form a first source/drain structure. A second semiconductor material is epitaxially grown from the first semiconductor material to form a second source/drain structure over the first source/drain structure. A bottom portion of the second source/drain structure is below a bottommost surface of the first source/drain structure. The second semiconductor material has a germanium volume concentration percentage greater than the first semiconductor material. A nanostructure stack is formed by removing the sacrificial layer of the multi-film layer stack, the second semiconductor material being electrically coupled to the nanostructures. 本公开提出一种半导体装置的制造方法。此方法包含在多膜层堆叠中图案化鳍片的步骤，以及形成开口于鳍片中并穿至基板之中。自沿着开口的