Silicon carbide epitaxy electrical control equipment

The invention relates to the field of silicon carbide processing, in particular to a silicon carbide chemical vapor deposition system gas supply device which comprises a base frame, a regulation and control plate, a control screen, control keys, a position adjusting mechanism and a handle. The problems that display control equipment of traditional silicon carbide epitaxy electrical control equipment is usually fixedly installed, adaptive adjustment is difficult to follow the reaction process and the side control observation direction of workers in the working process, the observation and control distance of the workers is increased, and the working efficiency is improved are solved. The rapid degree of controlling the reaction process of the silicon carbide is reduced, and the control accuracy of the reaction process of the silicon carbide is also reduced. 本发明涉及碳化硅加工领域，具体的说是一种碳化硅化学气相沉淀系统供气装置，包括基架、调控板、控制屏、控制键、调位机构和手柄；本发明解决了传统的碳化硅外延电气控制设备，其显示控制设备往往为固定式安装，在工作过程中难以跟随反应进程及工作人员侧操控观察方位进行适应性调整，增加了工作人员的观测及操控距离，降低了对碳化硅