Semiconductor device including field stop region

A semiconductor device including a field stop region is disclosed. An example of a semiconductor device includes a drift region of a first conductivity type disposed between a first surface and a second surface of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type at the second surface. The semiconductor device further includes a second region of the second conductivity type arranged adjacent to the first region at the second surface. A field stop region of the first conductivity type is arranged between the drift region and the second surface. A first electrode on the second surface is arranged directly adjacent to the first region in a first portion of the second surface and directly adjacent to the second region in a second portion of the second surface. The field stop region includes a first sub-region and a second sub-region between the first sub-region and the second surface. On a major portion of the first portion of the second surface, the sec